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Proceedings Paper

Electronic activity of dislocations and point defects of deformation origin in Hg1-xCdxTe
Author(s): S. G. Gassan-Zade; G. A. Shepelskii; S. V. Staryi; M. V. Strikha
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Paper Abstract

The addition of comparatively low density of dislocations Ndis less than or equal to 107 cm-2 causes the essential quantitative, and qualitative changes of kinetic coefficients in Hg1-xCdxTe (MCT) crystals. In n-type crystals the electrons concentration increases dramatically, and the electrons mobility decreases. Moreover, the characteristic maxima appears in the electrons Hall coefficient RH and mobility temperature dependency, being an evidence of the existence of the carriers of two types. In p-type crystals we observed the increase of halls concentration and the change of sign of RH with temperature and magnetic field in the low temperature region (T equal to 4.2 divided by 40 K), together with a transition from activation conductivity to metallic one. It was demonstrated, that these changes are caused not by electronic states of the dislocation core directly, but by the point defects, formed in the process of dislocation movement, and concenrated in the gliding planes. The amount of experimental data can be explained within the idea of the formation of the channels of the different type of conductivity connected with dislocations net, in the matrix of the crystal. This net is formed by tubes of the volume space charge around the dislocation core, penetrating throughout the. The dislocation core itself is formed by the line of cations and anions respectively with the dangling bounds of crystalline lattice.

Paper Details

Date Published: 14 April 2003
PDF: 7 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502196
Show Author Affiliations
S. G. Gassan-Zade, Institute of Semiconductor Physics (Ukraine)
G. A. Shepelskii, Institute of Semiconductor Physics (Ukraine)
S. V. Staryi, Institute of Semiconductor Physics (Ukraine)
M. V. Strikha, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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