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Proceedings Paper

Electrical and optical properties of indium antimonide doped by cadmium and tellurium
Author(s): Alexander V. Brodovoi; P. V. Pleskatch; S. G. Bunchuk; Oleg S. Zinets; V. A. Brodovoi
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Paper Abstract

In the present work indium antimonide crystals doped by cadmium and tellurium in equiatomic quantities have been studied. It was shown that (InSb)1-x(CdTe)x solid solutions with the mole concentration x ≤ 0.05 arises. Two maxima at x = 0.0025 and x = 0.02 - 0.03 and a minimum at x = 0.01 were found out in the dependence of the lattice constant on the composition x. It is shown that the change in the energy gap ΔE is proportional to the change in the lattice constant Δa. Dependencies of the effective electron mass, the electron density and the mobility on the composition x and temperature were studied. Minimal values of the effective electron mass and the energy gap were observed in the composition range x = 0.02 - 0.03 and were as follows meff = 0.009 mo and Eg = 0.07 eV (mo is the free electron mass). Anomalous (as large as tenfold) increase of diamagnetism was found out in the temperature dependence of the magnetic susceptibility of the solid solution with x = 0.05 in the range 4.2 K < T < 30 K.

Paper Details

Date Published: 14 April 2003
PDF: 7 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502194
Show Author Affiliations
Alexander V. Brodovoi, Institute for Problems of Materials Science (Ukraine)
P. V. Pleskatch, National Univ. (Ukraine)
S. G. Bunchuk, Institute of Semiconductor Physics (Ukraine)
Oleg S. Zinets, Institute for Nuclear Research (Ukraine)
V. A. Brodovoi, Paton Welding Institute (Ukraine)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics

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