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Proceedings Paper

Electrical properties of HgMnTe Schottky diodes
Author(s): Leonid A. Kosyachenko; Sergey E. Ostapov; Andrey V. Markov; Ilary M. Rarenko; Valery M. Sklyarchuk; Ye. F. Sklyarchuk
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Paper Abstract

The electrical properties of Al-Hg1-xMnxTe (x = 0.08 - 0.1) Schottky barriers are investigated. The main parameters of the diode structure and charge transport mechanisms responsible for their characteristics, tunneling and over-barrier passage of carriers, are determined. The features of the diode electrical characteristics caused by the narrow bandgap and big difference between effective masses of carriers are revealed. The results obtained experimentally and theoretically testify of the high detectivity of the diodes studied.

Paper Details

Date Published: 14 April 2003
PDF: 6 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502192
Show Author Affiliations
Leonid A. Kosyachenko, Chernivtsi National Univ. (Ukraine)
Sergey E. Ostapov, Chernivtsi National Univ. (Ukraine)
Andrey V. Markov, Chernivtsi National Univ. (Ukraine)
Ilary M. Rarenko, Chernivtsi National Univ. (Ukraine)
Valery M. Sklyarchuk, Chernivtsi National Univ. (Ukraine)
Ye. F. Sklyarchuk, Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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