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Proceedings Paper

IR photodetectors on CdSb, In4Se3, In4Te3-epitaxial barrier structures
Author(s): B. M. Gritsyuk; O. V. Galochkin; A. I. Rarenko; V. N. Strebezhev
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Paper Abstract

Perfect homo- and heteroepitaxial structures of n- and p-type conductivity on CdSb, In4Se3, In4Te3 semiconductors and their solid solutions were grown. On formed p-n-junctions there were investigated spectral dependence of photo-emf and detectivity in λ = 1 - 3 μm interval. It is shown the possibility of their using as IR-photodetectors.

Paper Details

Date Published: 14 April 2003
PDF: 7 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502189
Show Author Affiliations
B. M. Gritsyuk, Chernivtsi National Univ. (Ukraine)
O. V. Galochkin, Chernivtsi National Univ. (Ukraine)
A. I. Rarenko, Chernivtsi National Univ. (Ukraine)
V. N. Strebezhev, Chernivtsi National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics

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