Share Email Print
cover

Proceedings Paper

Nonelastic electron scattering in HgTe
Author(s): O. P. Malyk
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

By exact solution of stationary Boltzmann equation the nonequilibrium charge carrier distribution function is obtained. In the temperature range 4.2 - 300 K the main electron scattering mechanism are considered taking into account the nonelastic electron interaction with optical vibrations of the crystal lattice.

Paper Details

Date Published: 14 April 2003
PDF: 5 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502180
Show Author Affiliations
O. P. Malyk, Lviv Polytechnic National Univ. (Ukraine)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

© SPIE. Terms of Use
Back to Top