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Proceedings Paper

IR photodetectors based on MBE-grown MCT layers
Author(s): Vladimir V. Vasilyev; Victor N. Ovsyuk; Yuri G. Sidorov
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Paper Abstract

A complete technological cycle has been designed to produce photodetector arrays, which involves MBE growth of Hg1-xCdxTe (MCT) heteroepitaxial layers, fabrication of MCT-based photodetector structures, manufacture of silicon array multiplexers and hybrid assembly of a photodetector module consisting of a photodetector and multiplexer by means of indium micro bumps. Photoelectric parameters are given of photodetector array modules on the basis of photodiodes for the middle (3 - 3.5 μm) and far (8 - 12 μm) infrared ranges, operating at 78 - 80 K and 200 - 220 K temperatures.

Paper Details

Date Published: 14 April 2003
PDF: 8 pages
Proc. SPIE 5065, Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (14 April 2003); doi: 10.1117/12.502164
Show Author Affiliations
Vladimir V. Vasilyev, Institute of Semiconductor Physics (Russia)
Victor N. Ovsyuk, Institute of Semiconductor Physics (Russia)
Yuri G. Sidorov, Institute of Semiconductor Physics (Russia)


Published in SPIE Proceedings Vol. 5065:
Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov; Johanna V. Gumenjuk-Sichevska; Sergey A. Kostyukevych, Editor(s)

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