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Proceedings Paper

Effects of stress annealing on the index of refraction of SiO2 layers in MOS devices
Author(s): Witold Rzodkiewicz; Henryk M. Przewlocki
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Paper Abstract

In this paper we present the results of a study of the effect of high-temperature stress annealing in nitrogen on the index of refraction of SiO2 layers in MOS (metal/oxide/semiconductor) devices. The dependence of mechanical stress in the Si-SiO2 system on the annealing conditions has been experimentally characterized. Subsequently, we have correlated such properties with the dependence of the index of refraction on processing conditions and oxide thickness.

Paper Details

Date Published: 1 April 2003
PDF: 6 pages
Proc. SPIE 5064, Lightmetry 2002: Metrology and Testing Techniques Using Light, (1 April 2003); doi: 10.1117/12.501538
Show Author Affiliations
Witold Rzodkiewicz, Institute of Electron Technology (Poland)
Henryk M. Przewlocki, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 5064:
Lightmetry 2002: Metrology and Testing Techniques Using Light
Maksymilian Pluta; Mariusz Szyjer, Editor(s)

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