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Proceedings Paper

Laser diode on asymmetric heterostructure with two quantum wells and weak dependence of output power on temperature
Author(s): Ivan S. Manak; Alexander A. Afonenko; Sergei V. Nalivko
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Paper Abstract

The configuration of injection laser on the basis of asymmetric quantum well heterostructure with heterogeneous excitation of active region permissive to weaken essentially the threshold current and output power dependence on temperature is suggested. It is shown, that decreasing of output power with spontaneous recombination rate rising while heating the laser diode can be compensated by increasing of injection efficiency of carriers into amplifying quantum well at constant pumping current.

Paper Details

Date Published: 1 April 2003
PDF: 8 pages
Proc. SPIE 5064, Lightmetry 2002: Metrology and Testing Techniques Using Light, (1 April 2003); doi: 10.1117/12.501531
Show Author Affiliations
Ivan S. Manak, Belarusian State Univ. (Belarus)
Alexander A. Afonenko, Belarusian State Univ. (Belarus)
Sergei V. Nalivko, Belarusian State Univ. (Belarus)


Published in SPIE Proceedings Vol. 5064:
Lightmetry 2002: Metrology and Testing Techniques Using Light
Maksymilian Pluta; Mariusz Szyjer, Editor(s)

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