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Proceedings Paper

Femtosecond pulse damage and predamage behavior of dielectric thin films
Author(s): Mark Mero; Jianhua Liu; Ali Sabbah; Jayesh C. Jasapara; Kai Starke; Detlev Ristau; John K. McIver; Wolfgang G. Rudolph
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Paper Abstract

The damage behavior of five different oxide dielectric thin films (Ta2O5, TiO2, Al2O3, HfO2, and SiO2) has been investigated with ultrashort laser pulses with durations from 25 fs to 1 ps. At all pulse durations the damage threshold is well defined and scales with the bandgap energy of the material. The damage behavior can be described with a phenomenological model taking into account multi-photon excitation, impact ionization, and electron relaxation. The temporal evolution of the dielectric constant of the film following the excitation with pulses below the damage threshold has been measured with time-resolved pump-probe spectroscopy. The complex dielectric constant was retrieved from transient reflection and transmission data.

Paper Details

Date Published: 30 May 2003
PDF: 14 pages
Proc. SPIE 4932, Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization, (30 May 2003); doi: 10.1117/12.501361
Show Author Affiliations
Mark Mero, Univ. of New Mexico (United States)
Jianhua Liu, Univ. of New Mexico (United States)
Ali Sabbah, Univ. of New Mexico (United States)
Jayesh C. Jasapara, OFS Labs. (United States)
Kai Starke, Laser Zentrum Hannover e.V. (Germany)
Detlev Ristau, Laser Zentrum Hannover e.V. (Germany)
John K. McIver, Univ. of New Mexico (United States)
Wolfgang G. Rudolph, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 4932:
Laser-Induced Damage in Optical Materials: 2002 and 7th International Workshop on Laser Beam and Optics Characterization
Gregory J. Exarhos; Adolf Giesen; Arthur H. Guenther; Norbert Kaiser; Keith L. Lewis; Horst Weber; M. J. Soileau; Christopher J. Stolz, Editor(s)

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