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Proceedings Paper

Development of strain sensors utilizing giant magnetoresistive and tunneling magnetoresistive devices
Author(s): Markus Loehndorf; Stefani Dokupil; Manfred Ruehrig; Joachim Wecker; Eckhard Quandt
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Paper Abstract

This study investigates magnetic layer structures suitable for devices measuring mechanical responses such as stress, strain and pressure. The sensors are based either on giant magnetoresistiance (GMR) structures or on magnetic tunneling junctions (MTJ's) both intentionally prepared with highly magnetostrictive free layer materials. Results for magnetostrictive Fe50Co50 materials or amorphous Co- or Fe-based alloys serving as sensing (or “free”) layers are discussed in view of possible applications. In general, gauge factors in the range of 300-600 have been obtained for strain sensors based on MTJ's, whereas gauge factors of 2-4 are typical for metal based thin film, and 40-180 for piezoresistive strain gauges.

Paper Details

Date Published: 24 April 2003
PDF: 9 pages
Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); doi: 10.1117/12.500012
Show Author Affiliations
Markus Loehndorf, Ctr. for Advanced European Studies and Research (Germany)
Stefani Dokupil, Ctr. for Advanced European Studies and Research (Germany)
Manfred Ruehrig, Siemens AG (Germany)
Joachim Wecker, Siemens AG (Germany)
Eckhard Quandt, Ctr. for Advanced European Studies and Research (Germany)


Published in SPIE Proceedings Vol. 5116:
Smart Sensors, Actuators, and MEMS
Jung-Chih Chiao; Vijay K. Varadan; Carles Cané, Editor(s)

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