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Proceedings Paper

Bispectrum of the 1/f noise in diodes on quantum dots and wells
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Paper Abstract

The bispectrum of the 1/f noise is investigated in the present work. For the Gaussian noise it equals zero. LEDs on self-organized InAs/GaAs quantum dots and laser diodes on In0.2Ga0.8As/GaAs/InGaP quantum wells made in Russia were tested. The voltage noise was analyzed in a wide interval of currents through the diodes. Estimates of the probability density function and semi-invariants of the noise have not revealed any appreciable deviations from the Gauss law. Noise spectra Sv(f)in the range 1 Hz - 20 kHz were analyzed. In most cases the frequency exponent γs of the spectrum is close to one, the Hooge’s parameter αH has magnitude of the order 10-4. The bispectrum Bv(f1,f2of the noise is a complex function of frequencies f1 and f2. Its absolute value is decreasing while moving from the beginning of the frequency plane Of1f2. The decrease along the bisector (f1 = f2 = f) follows the power law characterized by the frequency exponent γB ≈ 1.5 γs. The dependence of the "height" of |Bv(f,f)| on the current through the diode is qualitatively similar to this one for the spectrum. The power law describes these dependences, however the exponents are essentially different.

Paper Details

Date Published: 8 May 2003
PDF: 9 pages
Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.499828
Show Author Affiliations
Arkady V. Yakimov, Nizhni Novgorod State Univ. (Russia)
Alexander V. Belyakov, Nizhni Novgorod State Univ. (Russia)
Mikhail Yu. Perov, Nizhni Novgorod State Univ. (Russia)
Lode J. K. Vandamme, Technische Univ. Eindhoven (Netherlands)

Published in SPIE Proceedings Vol. 5115:
Noise and Information in Nanoelectronics, Sensors, and Standards
Laszlo B. Kish; Frederick Green; Giuseppe Iannaccone; John R. Vig, Editor(s)

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