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Proceedings Paper

Large-scale integration of carbon nanotubes into silicon-based microelectronics
Author(s): Georg S. Duesberg; Andrew P. Graham; Maik Liebau; Robert Seidel; Eugen Unger; Franz Kreupl; Wolfgang Hoenlein
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Paper Abstract

The integration of carbon nanotubes (CNTs) into conventional silicon-technology with potential applications as interconnects, transistors, memory-cells, and sensors is an promising goal. Theoretical and experimental results indicate that CNT-based devices can outperform conventional silicon microelectronics. Concepts for the creation of vertical interconnects and transistors made out of CNTs, which allow a large scale integration, are presented. A vital step for their realization is the synthesis of individual CNTs with controlled diameters at lithographically predefined locations. Employing catalyst mediated Chemical Vapor Deposition (CVD) isolated CNTs have been grown out of holes in silicon dioxide which have been created by optical lithography. This allows the precise placement of individual CNTs on silicon substrates. Furthermore, the diameter of each CNT adjusts to the hole size, which makes it possible to control this important property separately for individual CNTs. In combination with the vertical integration concept those findings constitute a milestone in the parallel manufacture of nanotube-based devices with scalable batch processes.

Paper Details

Date Published: 29 April 2003
PDF: 13 pages
Proc. SPIE 5118, Nanotechnology, (29 April 2003); doi: 10.1117/12.499414
Show Author Affiliations
Georg S. Duesberg, Infineon Technologies AG (Germany)
Andrew P. Graham, Infineon Technologies AG (Germany)
Maik Liebau, Infineon Technologies AG (Germany)
Robert Seidel, Infineon Technologies AG (Germany)
Eugen Unger, Infineon Technologies AG (Germany)
Franz Kreupl, Infineon Technologies AG (Germany)
Wolfgang Hoenlein, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 5118:
Nanotechnology
Robert Vajtai; Xavier Aymerich; Laszlo B. Kish; Angel Rubio, Editor(s)

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