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Proceedings Paper

Calibration of EUV 2D photoresist simulation parameters for accurate predictive modeling
Author(s): Stewart A. Robertson; Patrick P. Naulleau; Donna J. O'Connell; Kevin McDonald; Todd M. Delano; Kenneth A. Goldberg; Steven G. Hansen; Kirk W. Brown; Robert L. Brainard
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Paper Abstract

In this work simulation parameters are developed for Shipley EUV-2D photoresist under exposure at 13.4nm. Baseline parameter values are determined from theory and experiment. The simulation parameters were tuned from these values using a commercial automatic parameter optimisation software to match simulation results to experimental lithographic data generated using the ETS Set-2 projection optics in the subfield exposure station (SES). In an attempt to maximise parameter accuracy the experimental data set used included 4 different feature sizes and known non-idealities of the exposure set-up were accounted for (mask errors, lens aberrations and metrology bias). The resulting model described the experimental data very well with only a low level of residual error.

Paper Details

Date Published: 16 June 2003
PDF: 10 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.499357
Show Author Affiliations
Stewart A. Robertson, Shipley Co. L.L.C. (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Donna J. O'Connell, Sandia National Labs. (United States)
Kevin McDonald, Sandia National Labs. (United States)
Todd M. Delano, Shipley Co. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Steven G. Hansen, ASML (United States)
Kirk W. Brown, Shipley Co. L.L.C. (United States)
Robert L. Brainard, Shipley Co. L.L.C. (United States)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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