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Proceedings Paper

Low-cost VLSI-compatible resonant-cavity-enhanced p-i-n in micron-Si operating at the VCSEL wavelengths around 850 nm
Author(s): Luca De Stefano; Luigi Moretti; Ivo Rendina; Caterina Summonte
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Paper Abstract

Low original design of Resonant-Cavity-Enhanced photodetectors at 850 nm, realized in microcrystalline silicon by simpe and low-cost thin film deposition processes compatible with standard VLSI technologies is presented. The configuration allows high quantum efficiencies in thin active region. This increases the bandwidth reducign the carrier transit time in teh device. The wavelength selective behavior is a further characterization of high-quality distributed bragg reflectors, necessary to the microcavity definition and optimization, and of the active p-i-n structure are also reported.

Paper Details

Date Published: 21 April 2003
PDF: 6 pages
Proc. SPIE 5117, VLSI Circuits and Systems, (21 April 2003); doi: 10.1117/12.499146
Show Author Affiliations
Luca De Stefano, IMM-CNR (Italy)
Luigi Moretti, Univ. degli Studi Mediterranea di Reggio Calabria (Italy)
Ivo Rendina, IMM-CNR (Italy)
Caterina Summonte, IMM-CNR (Italy)


Published in SPIE Proceedings Vol. 5117:
VLSI Circuits and Systems
Jose Fco. Lopez; Juan A. Montiel-Nelson; Dimitris Pavlidis, Editor(s)

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