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Proceedings Paper

Characterization of SU-8 as a resist for electron-beam lithography
Author(s): Arun K. Nallani; Sang Won Park; Jeong Bong Lee
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Paper Abstract

Electron beam lithography (EBL) is widely used for patterning of sub-micron and nano-scale patterns. Patterns in the order of tens of nano meters have been successfully realized using EBL. There are increasing needs in high aspect ratio structures in sub-micron and nano scales for microelectronics and other applications. Traditionally, high aspect ratio structures in sub-micron and nano scales have been realized by precision lithography techniques and subsequent dry etch techniques. In this work, we present commercially available SU-8 as a potential resist that can be used for direct resist patterning of high aspect ratio structures in sub-micron and nano scales. Such resist pattern can be used as a polymeric mold to create high aspect ratio metallic sub-micron and nano scales structures using electroplating technology. Compared to the most commonly used EBL resist, PMMA (poly methylmethacrylate), SU-8 requires a factor of 100~150 less exposure doses for equal thickness. It results in a significant reduction of EBL processing time. In this paper, characterization results on the patterning of up to 4:1 aspect ratio SU-8 structures with minimum feature size of 500 nm is reported. In addition, preliminary results on high aspect ratio metallic sub-micron structures using electroplating technology are also reported.

Paper Details

Date Published: 24 April 2003
PDF: 10 pages
Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); doi: 10.1117/12.499112
Show Author Affiliations
Arun K. Nallani, Univ. of Texas at Dallas (United States)
Sang Won Park, Univ. of Texas at Dallas (United States)
Jeong Bong Lee, Univ. of Texas at Dallas (United States)


Published in SPIE Proceedings Vol. 5116:
Smart Sensors, Actuators, and MEMS
Jung-Chih Chiao; Vijay K. Varadan; Carles Cané, Editor(s)

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