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Proceedings Paper

Photoluminescence scanning near-field optical microscopy of GaAlAs/GaAs quantum wells
Author(s): Dana Kostalova; Lubomir Grmela; Pavel Tomanek; Jitka Bruestlova
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Paper Abstract

Submicron spatial resolution photoluminescence is used to assess radiative efficiency and spatial uniformity of GaAlAs/GaAs heterojunctions. Room temperature photo-luminescence of multiple GaAlAs wells with GaAs barriers was measured as a function of a facet of device perpendicular to the layer structure. The scanning near-field optical microscope is applied for the diagnostics of the defects in semiconductor devices for instance in a multiple quantum well grown by molecular beam epitaxy. Our high resolution studies reveal that the radiative recombination for the GaAlAs quantum well is approx. 50 times more efficient than for the underlying GaAs film. The comparison of the Far-field and Near-field characteristics of measured quantities are also given.

Paper Details

Date Published: 8 July 2003
PDF: 5 pages
Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498657
Show Author Affiliations
Dana Kostalova, Brno Univ. of Technology (Czech Republic)
Lubomir Grmela, Brno Univ. of Technology (Czech Republic)
Pavel Tomanek, Brno Univ. of Technology (Czech Republic)
Jitka Bruestlova, Brno Univ. of Technology (Czech Republic)


Published in SPIE Proceedings Vol. 5036:
Photonics, Devices, and Systems II
Miroslav Hrabovsky; Dagmar Senderakova; Pavel Tomanek, Editor(s)

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