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Proceedings Paper

Local measurement of optically induced photocurrent in semiconductor structures
Author(s): Marketa Benesova; Pavel Dobis; Pavel Tomanek; Nadezda Uhdeova
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Paper Abstract

Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Paper Details

Date Published: 8 July 2003
PDF: 5 pages
Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498656
Show Author Affiliations
Marketa Benesova, Brno Univ. of Technology (Czech Republic)
Pavel Dobis, Brno Univ. of Technology (Czech Republic)
Pavel Tomanek, Brno Univ. of Technology (Czech Republic)
Nadezda Uhdeova, Brno Univ. of Technology (Czech Republic)

Published in SPIE Proceedings Vol. 5036:
Photonics, Devices, and Systems II
Miroslav Hrabovsky; Dagmar Senderakova; Pavel Tomanek, Editor(s)

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