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Proceedings Paper

Erbium localized doping into various cuts of lithium niobate and sapphire: a comparative study
Author(s): Pavla Nekvindova; Anna Mackova; Vratislav Perina; Jarmila Cervena; Pavel Capek; Josef Schroefel; Jarmila Spirkova; Jiri Oswald
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Paper Abstract

Medium temperature (350 °C) localized doping of Er3+ was studied in lithium niobate (LN) and sapphire single crystal wafers that were cut in various crystallographic directions. It was found that the efficiency of the doping was connected with orientations of the substrate wafers of both LN and sapphire, and with the presence of mobile lithium ions in the structure of LN. The basic interstitial mechanism of erbium incorporation into the structure of sapphire and LN is in the latter accompanied with erbium for lithium ion exchange. While the rate of the interstitial diffusion was higher in the wafers oriented perpendicularly towards the cleavage planes of the crystals, ion exchange process was significant in the wafers cut in cleavage planes. Waveguiding properties in erbium doped lithium niobate originated rather from presence of erbium in the structure of the crystals than being a consequence of a weak proton exchange. Luminescence properties of the fabricated samples are also presented.

Paper Details

Date Published: 8 July 2003
PDF: 6 pages
Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498640
Show Author Affiliations
Pavla Nekvindova, Prague Institute of Chemical Technology (Czech Republic)
Anna Mackova, Nuclear Physics Institute (Czech Republic)
Vratislav Perina, Nuclear Physics Institute (Czech Republic)
Jarmila Cervena, Nuclear Physics Institute (Czech Republic)
Pavel Capek, Czech Technical Univ. in Prague (Czech Republic)
Josef Schroefel, Czech Technical Univ. in Prague (Czech Republic)
Jarmila Spirkova, Prague Institute of Chemical Technology (Czech Republic)
Jiri Oswald, Institute of Physics (Czech Republic)


Published in SPIE Proceedings Vol. 5036:
Photonics, Devices, and Systems II

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