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Proceedings Paper

Photoelectric characteristics of contacts In-semiconductor A3B5
Author(s): Tinatin Laperashvili; Ilia Imerlishvili; Manana Khachidze; David Laperashvili
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Paper Abstract

The effect of annealing structures on the electrical and photoelectric properties of metal-semiconductor contacts was investigated. Metal/semiconductor structures have been fabricated by method of electrochemically deposition of In on the electrochemically cleaned surface of the semiconductors A3B5 (GaP, GaAs). The dark capacitance and current -voltage characteristics and the hotoelectric spectra of zero bias for front-illuminated contact show near-ideal Schottky barrier diode properties for annealing temperature up to 250-3000C. Was found that the spectra of zero bias photocurrent of In/GaP beside the region photoconductivity resulting from band to band excitation, contains, also, separated of them the region photoconductivity in a long wavelength of spectra, which is related to the interaction between the metal and semiconductor. Samples used for the fabrication of In/GaP diodes were growing by Chochralski method especially un doped n-type GaP into (III) oriented wafers. The thickness and carrier concentration was 200-250 mimic and (2-4). 10 exp17 atom/cm3 respectively. At first ohmical contact to the one side of wafer was formed by alloying of indium at the temperature 5000C for GaAs and 600°C for GaP during 5 min in hydrogen. Then the sample with ohmic contact and wire for preceding the power was coaled with chemical stable polystyrene solution except the area where the metal will be deposited. The wafers were then ached chemically, rinsed in distilled water and were transferred immediately into electrolyte for deposition of In.

Paper Details

Date Published: 29 April 2003
PDF: 5 pages
Proc. SPIE 5118, Nanotechnology, (29 April 2003); doi: 10.1117/12.498480
Show Author Affiliations
Tinatin Laperashvili, Institute of Cybernetics (Georgia)
Ilia Imerlishvili, Institute of Cybernetics (Georgia)
Manana Khachidze, Tbilisi State Univ. (Georgia)
David Laperashvili, Georgian Technical Univ. (Georgia)


Published in SPIE Proceedings Vol. 5118:
Nanotechnology
Robert Vajtai; Xavier Aymerich; Laszlo B. Kish; Angel Rubio, Editor(s)

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