Share Email Print
cover

Proceedings Paper

Double heterojunction bipolar phototransistor model
Author(s): Michal Horak
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

An analytical mathematical model of the double heterojunction NpN bipolar phototransistor with abrupt heterojunctions in three terminal configuration is presented. The thermionic-filed emission and diffusion of injected carriers is considered and the Ebers-Moll type relations for the collector and emitter current are obtained. Several steady state characteristics of the phototransistor structure are calculated (optical gain, quantum efficiency, responsivity).

Paper Details

Date Published: 8 July 2003
PDF: 6 pages
Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498453
Show Author Affiliations
Michal Horak, Brno Univ. of Technology (Czech Republic)


Published in SPIE Proceedings Vol. 5036:
Photonics, Devices, and Systems II
Miroslav Hrabovsky; Dagmar Senderakova; Pavel Tomanek, Editor(s)

© SPIE. Terms of Use
Back to Top