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Proceedings Paper

Double heterojunction bipolar phototransistor model
Author(s): Michal Horak
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Paper Abstract

An analytical mathematical model of the double heterojunction NpN bipolar phototransistor with abrupt heterojunctions in three terminal configuration is presented. The thermionic-filed emission and diffusion of injected carriers is considered and the Ebers-Moll type relations for the collector and emitter current are obtained. Several steady state characteristics of the phototransistor structure are calculated (optical gain, quantum efficiency, responsivity).

Paper Details

Date Published: 8 July 2003
PDF: 6 pages
Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498453
Show Author Affiliations
Michal Horak, Brno Univ. of Technology (Czech Republic)

Published in SPIE Proceedings Vol. 5036:
Photonics, Devices, and Systems II
Miroslav Hrabovsky; Dagmar Senderakova; Pavel Tomanek, Editor(s)

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