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Proceedings Paper

Optimization of plasma-deposited silicon oxinitride films for interferometric MOEMS applications
Author(s): Christophe Gorecki
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Paper Abstract

In view of applications of SiOxNy thin films in MOEMS technology, a study the optomechanical characteristics of this material PECVD deposited are investigated. To optimize the quality of SiOxNy layers we establish the relationship between the chemical properties, optical performances, micromechanical stress, and growth parameters of deposited films. To use the SiOxNy thin film for the core layer of a strip-loaded waveguide, we propose preparation conditions of SiOxNy that offers a low-loss optical waveguide with well-controlled refractive index, based on a low-internal stress multilayer structure .

Paper Details

Date Published: 7 March 2006
PDF: 4 pages
Proc. SPIE 4101, Laser Interferometry X: Techniques and Analysis, (7 March 2006); doi: 10.1117/12.498439
Show Author Affiliations
Christophe Gorecki, Univ. de Franche-Comte (France)


Published in SPIE Proceedings Vol. 4101:
Laser Interferometry X: Techniques and Analysis
Gordon M. Brown; Malgorzata Kujawinska; Werner P. O. Jueptner; Ryszard J. Pryputniewicz; Ryszard J. Pryputniewicz; Mitsuo Takeda, Editor(s)

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