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Proceedings Paper

Optical properties of thin layers and conditions of the reactive sputtering for passivation of SQWSCH lasers
Author(s): B. Stanczyk; A. Jagoda; Lech Dobrzanski; Andrzej Malag; Sylwia Wrobel; A. E. Kowalczyk
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Paper Abstract

This paper presents method for facets passivation of high power lasers GaAl As using thin films of AIN and GaN formed by reactive sputtering at low temperature. GaN has been chosen due to its exceptional stability at high temperatures and resistance against attack. GaN is insoluble in acids. Layers of GaN protect AIN coating against influence of chemical and physical factors. We report some problems concerning technology of GaN thin films deposition using RF Sputtering from Ga target in Ar-N2 gas mixtures. Observation of N+ peaks in plasma spectrum provides information on optimal conditions for synthesis of GaN. The quality of GaN layers was examined by X-ray Diffraction (XRD), SIMS method, optical absorption, measurement of refractive index and density. Lasers diodes with coated mirrors of AIN-GaN exhibit good stability during CW life-test.

Paper Details

Date Published: 8 July 2003
PDF: 6 pages
Proc. SPIE 5036, Photonics, Devices, and Systems II, (8 July 2003); doi: 10.1117/12.498251
Show Author Affiliations
B. Stanczyk, Institute of Electronic Materials Technology (Poland)
A. Jagoda, Institute of Electronic Materials Technology (Poland)
Lech Dobrzanski, Institute of Electronic Materials Technology (Poland)
Andrzej Malag, Institute of Electronic Materials Technology (Poland)
Sylwia Wrobel, Institute of Electronic Materials Technology (Poland)
A. E. Kowalczyk, Institute of Electronic Materials Technology (Poland)

Published in SPIE Proceedings Vol. 5036:
Photonics, Devices, and Systems II
Miroslav Hrabovsky; Dagmar Senderakova; Pavel Tomanek, Editor(s)

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