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Proceedings Paper

Dynamics of formation of nanoparticles by UV laser ablation
Author(s): Qihong Lou; Jun Zhen
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Paper Abstract

We will discuss reults of the experimental and theoretical study of the low-frequency noise in GaN/AlGaN 2D structures and examine possible sources of noise, including contacts, surface and 2D channel itself. 2D GaN/AlGaN heterostructures exhibit a much small level of 1/f noise than bulk GaN films. In the frame of model linking noise to the tail states, this might be explained by a high degeneracy of the 2D electrons in this structures. Due to the electron degeneracy, the tail states mechanism of the 1/f noise is suppresed in GaN-based 2D structures. Our measurements show that contacts does not contribute much to overall low frequency niose. Concentration dependence of the Hooge parameter points out to the tunneling mechanism of noise in these structures.

Paper Details

Date Published: 29 April 2003
PDF: 5 pages
Proc. SPIE 5118, Nanotechnology, (29 April 2003); doi: 10.1117/12.498111
Show Author Affiliations
Qihong Lou, Shanghai Institute of Optics and Fine Mechanics (China)
Jun Zhen, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 5118:
Nanotechnology
Robert Vajtai; Xavier Aymerich; Laszlo B. Kish; Angel Rubio, Editor(s)

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