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Proceedings Paper

Orthogonal-projection method for solving equations of diffusion of minority charge carriers generated by the electron beam in semiconductors
Author(s): A. A. Belov; N. D. Egupov; A. A. Samokhvalov; M. A. Stepovich; M. M. Tchaikovsky
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Paper Abstract

The results of investigations of some possibilities of numeric-analytical methods application for solving problems of the heat-mass transfer that is concerned with wide kilovolt electron beam with solids interaction processes are reported. The differential equation describing the diffusion of non-equilibrium minority charge carriers generated by electron beam in semiconducotrs is observed. The spectral method using the modified Laguerre's functions based on the mathematical orthogonal projection apparatus is developed for solving this equation.

Paper Details

Date Published: 1 April 2003
PDF: 11 pages
Proc. SPIE 5025, Fifth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, (1 April 2003); doi: 10.1117/12.498033
Show Author Affiliations
A. A. Belov, Moscow Bauman State Technical Univ. (Russia)
N. D. Egupov, Moscow Bauman State Technical Univ. (Russia)
A. A. Samokhvalov, Moscow Bauman State Technical Univ. (Russia)
M. A. Stepovich, Moscow Bauman State Technical Univ. (Russia)
M. M. Tchaikovsky, Moscow Bauman State Technical Univ. (Russia)


Published in SPIE Proceedings Vol. 5025:
Fifth Seminar on Problems of Theoretical and Applied Electron and Ion Optics

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