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Proceedings Paper

Nonlinear modeling of low-to-high-frequency noise up-conversion in microwave electron devices
Author(s): Fabio Filicori; Pier Andrea Traverso; Corrado Florian
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Paper Abstract

Measurement-based, circuit-oriented non-linear noise modeling of microwave electron devices is still an open field of research, since existing approaches are not always suitable for the accurate prediction of low-frequency noise up-conversion to RF, which represents an essential information for the non-linear circuit analyses performed in the CAD of low phase-noise oscillators. In this paper a technology-independent, empirical approach to the modeling of noise contributions at the ports of electron devices, operating under strongly non-linear conditions, is proposed. Details concerning the analytical formulation of the model, which is derived by considering randomly time-varying perturbations in the basic equations of an otherwise conventional charge-controlled non-linear model, are presented, along with a discussion about the measurement techniques devoted to its experimental characterization. An example of application of the proposed Charge-Controlled Non-linear Noise (CCNN) model is considered in the case of a HBT transistor. Techniques devoted to the implementation of the obtained model in the framework of commercial CAD tools for circuit analysis and design are provided as well.

Paper Details

Date Published: 12 May 2003
PDF: 12 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.497568
Show Author Affiliations
Fabio Filicori, Univ. degli Studi di Bologna (Italy)
Pier Andrea Traverso, Univ. degli Studi di Bologna (Italy)
Corrado Florian, Univ. degli Studi di Bologna (Italy)

Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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