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Proceedings Paper

Laser spectroscopy of silicon quantum materials
Author(s): Yoshihiko Kanemitsu
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Paper Abstract

Optical properties and electronic structures of silicon quantum materials are reviewed. Crystalline silicon (c-Si) and amorphous silicon (a-Si) based zero-dimensional (0D) nanoparticles and two-dimensional (2D) quantum-wells were prepared and their photoluminescence (PL) properties were studied by means of resonant excitation spectroscopy. The PL peak energies of c-Si and a-Si nanoparticles and quantum wells are blueshifted from those of bulk c-Si and a-Si. TO-phonon related structures appear in resonantly excited luminescence spectra of H-passivated c-Si and a-Si nanoparticles. This indicates that visible luminescence is due to excitons confined in the interior c-Si and a-Si states. In SiO2-passivated c-Si and a-Si nanoparticles, fine structures due to Si-O-Si vibrations appear in resonant luminescence spectra. In 0D Si/SiO2 systems, excitons are localized at the interface between the Si interior and surface SiO2 layer. In 2D Si/SiO2 systems, both excitons confined in the Si well and excitons localized at the Si-SiO2 interface determine PL properties. The electronic structures and luminescence properties of Si nanostructures are discussed.

Paper Details

Date Published: 1 April 2003
PDF: 11 pages
Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); doi: 10.1117/12.497304
Show Author Affiliations
Yoshihiko Kanemitsu, Nara Institute of Science and Technology (Japan)


Published in SPIE Proceedings Vol. 5024:
Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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