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Proceedings Paper

Photostructural transformations in amorphous Ge-S thin films: a photoluminescence study
Author(s): N. V. Bondar; N. A. Davydova; V. V. Tishchenko; Miroslav Vlcek
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Paper Abstract

A bond-conversion model for the photostructural changes in the photoluminescence and Raman spectra is proposed. The essential role in this model belongs to lone-pair electrons of chalcogen atoms, which are optically convert into bonding ones, leading to the structure reconstruction.

Paper Details

Date Published: 1 April 2003
PDF: 4 pages
Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); doi: 10.1117/12.497289
Show Author Affiliations
N. V. Bondar, Institute of Physics (Ukraine)
N. A. Davydova, Institute of Physics (Ukraine)
V. V. Tishchenko, Institute of Physics (Ukraine)
Miroslav Vlcek, Univ. of Pardubice (Czech Republic)


Published in SPIE Proceedings Vol. 5024:
Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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