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Proceedings Paper

Photosensitive properties of As-S layers
Author(s): Alexander V. Stronski; Miroslav Vlcek; A. Sklenar; Sergey A. Kostyukevich
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Paper Abstract

The present paper is concerned with investigations of photosensitive properties of As-S thin layers. Spectral dependence of the refraction index n of variously treated (virgin, exposed, annealed) samples was estimated from optical transmission in the spectral region 400 - 2500 nm. The n energy dependence of variously treated samples was fitted by the Wemple-DiDomenico dispersion relationship and used to estimate the single-oscillator model parameters. It was found, that exposure, as well as annealing leads to the increase in n values over the all investigated spectral region. Compositional dependencies of single-oscillator model parameter Ed (dispersion energy), optical dielectric constant ε(0) show maximum at stoichiometric composition As40-S60 and, possibly, weak maximum at As28.6S71.4 composition. Composition evolution of the intensity of bands in Raman spectra corresponding to the As rich and S rich molecular fragments is in agreement with compositional changes of Ed and optical dielectric constant. Changes of the parameters of the single-oscillator model induced by treatment are discussed on the base of photo- and thermally-induced structural changes and are consistent with topological models and models that claim a degree of chemical ordering. Such photoinduced structural changes provide good etching selectivity of As-S layers in amine based solvents. Surface relief patterns that were fabricated have good surface quality. Diffraction efficiency values of holographic diffraction gratings obtained on the base of As100-XSX layers consisted 60 - 70%.

Paper Details

Date Published: 1 April 2003
PDF: 6 pages
Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); doi: 10.1117/12.497287
Show Author Affiliations
Alexander V. Stronski, Institute of Semiconductor Physics (Ukraine)
Miroslav Vlcek, Univ. of Pardubice (Czech Republic)
A. Sklenar, Univ. of Pardubice (Czech Republic)
Sergey A. Kostyukevich, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 5024:
Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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