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Proceedings Paper

Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs
Author(s): Evgenie F. Venger; Galina N. Semenova; Yevgen Yu. Braylovsky; Stanislawa Strzelecka; Nadyezhda Ye. Korsunskaya; Wlodzimierz Strupinski; Yury G. Sadofyev; Mikhail P. Semtsiv; Murat Sharibaev
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Paper Abstract

The effect of electron (E = 1.8 MeV), γ-(60Co) and X-ray irradiation on the structural and optical properties of a (Ga,Al)As and a (Zn,Cd)Te quantum wells (QWs) grown on semi-insulating (SI) GaAs is studied. The high radiation hardness of the A3B5 QWs (no changes in recombination characteristics) after irradiation up to a dose of approximately 2•109 rad was found, while SI GaAs substrate manifested the standard effect of the charge carrier removal under such irradiation dose. A2B6 quantum-sized structures (QSS) tends to degrade under lower irradiation dose. The emission bands transformation after irradiation up to a dose ≥ 2•109 rad have been observed in ZnTe buffer layer and CdZnTe QWs. The role of Cd diffusion and internal strain in radiation enhanced ternary alloys QW's degradation is discussed. The calculation of PL peak energy shift is presented in assumption of the well profile change as a result of the radiation enhanced Cd diffusion.

Paper Details

Date Published: 1 April 2003
PDF: 14 pages
Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); doi: 10.1117/12.497257
Show Author Affiliations
Evgenie F. Venger, Institute of Semiconductor Physics (Ukraine)
Galina N. Semenova, Institute of Semiconductor Physics (Ukraine)
Yevgen Yu. Braylovsky, Institute for Nuclear Research (Ukraine)
Stanislawa Strzelecka, Institute of Electronic Materials Technology (Poland)
Nadyezhda Ye. Korsunskaya, Institute of Semiconductor Physics (Ukraine)
Wlodzimierz Strupinski, Institute of Electronic Materials Technology (Poland)
Yury G. Sadofyev, P.N. Lebedev Physical Institute (Russia)
Mikhail P. Semtsiv, Institute of Semiconductor Physics (Ukraine)
Murat Sharibaev, Berdakh Karakalpac State Univ. (Uzbekistan)


Published in SPIE Proceedings Vol. 5024:
Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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