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Proceedings Paper

Characterization of thin film semiconductor heterostructures using interference modes in wide spectral region
Author(s): Nikolas L. Dmitruk; Oleg S. Gorea; T. A. Mikhailik; E. V. Pidlisnyi; Volodymyr R. Romaniuk; Thomas Wagner
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Paper Abstract

The investigation of semiconductor GaAs/GaPAs heterostructures in wide spectral region from 0.3 to 70 μm were performed by excitation of interference modes. Such approach allows to avoid the ambiguity which arises at solving of inverse spectroscopic or ellipsometric problem. We propose to use the interference extremuma excited in the optical phonon region as a very sensitive to total thickness of heterostructure grown on doped substrate. The results show the interference method has a good sensitivity as well to chemical composition x of alloy as to geometrical parameters of corresponding films.

Paper Details

Date Published: 1 April 2003
PDF: 6 pages
Proc. SPIE 5024, Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (1 April 2003); doi: 10.1117/12.497152
Show Author Affiliations
Nikolas L. Dmitruk, Institute of Semiconductor Physics (Ukraine)
Oleg S. Gorea, State Univ. of Moldova (Moldova)
T. A. Mikhailik, Institute of Semiconductor Physics (Ukraine)
E. V. Pidlisnyi, Institute of Semiconductor Physics (Ukraine)
Volodymyr R. Romaniuk, Institute of Semiconductor Physics (Ukraine)
Thomas Wagner, LOT-Oriel GmbH (Germany)


Published in SPIE Proceedings Vol. 5024:
Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergey V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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