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Proceedings Paper

Flicker noise characterization and modeling of MOSFETs for RF IC design
Author(s): Yuhua Cheng
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Paper Abstract

This paper reviews the recent results of the flicker noise characterization and modeling of MOSFETs for RF IC design. The dependences of flicker noise characteristics to process parameters, such as the thickness and quality of gate oxide, and the device parameters, such as the channel length/width and fingers, have been summarized to better understand the flicker noise bahavior and develop physical and accurate flicker noise models. The physical origin of the flicker noise and the issues of the existing compact models in predicting the flicker noise characteristics have been also discussed. Furthermore, the impact of flicker noise to the phase noise of RF circuits is studied while looking for either process or circuit approaches to reduce the influence of flicker noise contribution to the circuit noise. Finally, some modeling approaches are proposed to improve existing compact flicker noise models to predict the noise behavior of RF circuits well.

Paper Details

Date Published: 12 May 2003
PDF: 12 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.497094
Show Author Affiliations
Yuhua Cheng, Skyworks Solutions Inc. (United States)


Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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