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Proceedings Paper

Determination of the influence of device structure and alloy material on the noise behavior of hetero-FETs
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Paper Abstract

The noise performance of sub-quarter micrometer gate length FETs is determined by using physical simulators. The hydrodynamic transport model equations are linearized and efficiently solved in two dimensions to determine the small-signal parameters and the minimum noise figure up to frequencies near the device cut-off frequency. For higher frequencies, the noise performance is obtained by using a 2D Monte Carlo code which fully takes into account the non-stationary transport properties and quantization effects. The relation between the terminal noise currents and the internally generated noise at the different device regions are determined. Different device stuctures are simulated and the obtained results are compared with experimental data.

Paper Details

Date Published: 12 May 2003
PDF: 12 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.497035
Show Author Affiliations
Ali Abou-Elnour, Ajman Univ. of Science and Technology (United Arab Emirates)
Ossama Abo-Elnor, Ajman Univ. of Science and Technology (United Arab Emirates)


Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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