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Proceedings Paper

Mesoscopic noise in VLSI devices
Author(s): Giuseppe Iannaccone
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Paper Abstract

The rich variety of noise properties that make the field of mesoscopic transport so fascinating is going to be shared with "common" VLSI devices. Typical MOSFETs used of present-day VLSI circuits and systems already have feature sizes smaller than what we usually consider mesoscopic devices. In this talk, we focus on shot noise of the drain and gate currents in nanoscale MOSFETs. The subject is of interest from the point of view of applications, since adequate models of noise in such MOSFETs are required, especially for high-frequency analog and mixed-signal applications, and from the point of view of the understanding of the underlying physics, since effects typical of mesoscopic devices can now be observed at room temperature and in silicon.

Paper Details

Date Published: 8 May 2003
PDF: 9 pages
Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.496998
Show Author Affiliations
Giuseppe Iannaccone, Univ. degli Studi di Pisa (Italy)

Published in SPIE Proceedings Vol. 5115:
Noise and Information in Nanoelectronics, Sensors, and Standards
Laszlo B. Kish; Frederick Green; Giuseppe Iannaccone; John R. Vig, Editor(s)

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