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Proceedings Paper

Real-time quantitative imaging for semiconductor crystal growth, control, and characterization
Author(s): Michael J. Wargo
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Paper Abstract

A quantitative real-time image processing system has been developed which, by software control, can be reconfigured for a multiplicity of tasks critical to the processing and characterization of semiconductor materials. In thermal imager mode, two-dimensional temperature distributions of semiconductor melt surfaces (900 degree(s)C - 1600 degree(s)C) can be obtained with temperature resolution better than +/- 0.5 degree(s)C and spatial resolution of better than 0.5 mm. This capability has been applied to the analysis of melt surface thermal field distributions. Temporal and spatial image processing techniques, combined with multitasking computational and data acquisition capabilities have been used to establish this approach to thermal imaging as a multimode sensor for systems control during crystal growth. A second configuration of the image processing engine in conjunction with bright and dark field transmission optics is used to determine, post growth, the microdistribution of free-charge carriers and submicron-sized crystalline defects in elemental and compound semiconductors. These techniques are nonintrusive. The infrared absorption characteristics of wafers are determined with a spatial resolution of less than 10 micrometers and, after calibration, are converted into charge carrier density. These experimental configurations for sensing, control, and characterization are readily adaptable for remote telescience operation.

Paper Details

Date Published: 1 December 1991
PDF: 12 pages
Proc. SPIE 1557, Crystal Growth in Space and Related Optical Diagnostics, (1 December 1991); doi: 10.1117/12.49606
Show Author Affiliations
Michael J. Wargo, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1557:
Crystal Growth in Space and Related Optical Diagnostics
James D. Trolinger; Ravindra B. Lal, Editor(s)

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