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Proceedings Paper

Design of low-noise wide-dynamic-range GaAs optical preamps
Author(s): Robert J. Bayruns; Timothy Laverick; Norman Scheinberg; Daniel Stofman
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Paper Abstract

GaAs MESFET technology is ideal for use in lightwave receiver applications. FET devices have a fundamental advantage over BJT transistors in low noise applications because of their inherent high input impedance. Another advantage comes from the fact that FETs are majority carrier devices and can be easily used as feedback elements in automatic gain control applications.

Paper Details

Date Published: 1 November 1991
PDF: 8 pages
Proc. SPIE 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing, (1 November 1991); doi: 10.1117/12.49322
Show Author Affiliations
Robert J. Bayruns, Anadigics, Inc. (United States)
Timothy Laverick, Anadigics, Inc. (United States)
Norman Scheinberg, Anadigics, Inc. (United States)
Daniel Stofman, Anadigics, Inc. (United States)


Published in SPIE Proceedings Vol. 1541:
Infrared Sensors: Detectors, Electronics, and Signal Processing
T. S. Jay Jayadev, Editor(s)

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