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Proceedings Paper

High contrast ratio InxGa1-xAs/GaAs multiple-quantum-well spatial light modulators
Author(s): Alex Harwit; Mr. Rowell Fernandez; Wendell D. Eades
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Paper Abstract

We report optical modulation results on InGaAs/GaAs coupled multiple quantum well spatial light modulators. The structures consist of an n+ GaAs buffer, an undoped 250 period coupled multiple quantum well layer, and a p+ GaAs/InAs cap. The samples are probed at room temperature using photoabsorption spectroscopy. An absorption peak is observed at 969 nm, and this shifts to 982 nm as the field is increased from 0 to 67 kV/cm, in good agreement with theory. For a single pass through the structure, this results in a contrast ratio > 8:1 at 969 nm. A second modulator exhibits a contrast ratio > 8:1 at 1.04 micrometers .

Paper Details

Date Published: 1 November 1991
PDF: 10 pages
Proc. SPIE 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing, (1 November 1991); doi: 10.1117/12.49317
Show Author Affiliations
Alex Harwit, Lockheed Palo Alto Research Lab. (United States)
Mr. Rowell Fernandez, Lockheed Palo Alto Research Lab. (United States)
Wendell D. Eades, Lockheed Palo Alto Research Lab. (United States)


Published in SPIE Proceedings Vol. 1541:
Infrared Sensors: Detectors, Electronics, and Signal Processing
T. S. Jay Jayadev, Editor(s)

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