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Proceedings Paper

Advances in multiple-quantum-well IR detectors
Author(s): Walter L. Bloss; Michael J. O'Loughlin; Mary Rosenbluth
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Paper Abstract

The performance of GaAs/AlGaAs multiple quantum well long-wavelength infrared detectors is evaluated for potential applications in focal plane arrays. A number of GaAs/AlGaAs quantum well infrared detectors with absorption between 7 to 12 micrometers have been fabricated and characterized. In these samples, the quantum well width and barrier height were held approximately constant, while the AlGaAs barrier thickness was varied from 300 to 500 angstrom. These detectors were characterized by FTIR absorption, dark current, responsivity, spectral noise density, and thermal activation energy measurements at temperatures ranging from 6 to 80 K. A maximum detectivity of 4 X 1013 cm(root)Hz/W at 6 K is obtained at (lambda) equals 8.4 micrometers for the 500 angstrom barrier sample.

Paper Details

Date Published: 1 November 1991
PDF: 9 pages
Proc. SPIE 1541, Infrared Sensors: Detectors, Electronics, and Signal Processing, (1 November 1991); doi: 10.1117/12.49314
Show Author Affiliations
Walter L. Bloss, The Aerospace Corp. (United States)
Michael J. O'Loughlin, The Aerospace Corp. (United States)
Mary Rosenbluth, The Aerospace Corp. (United States)

Published in SPIE Proceedings Vol. 1541:
Infrared Sensors: Detectors, Electronics, and Signal Processing
T. S. Jay Jayadev, Editor(s)

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