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Proceedings Paper

Low-frequency noise in porous Si LED
Author(s): Bela Szentpali; Peter Gottwald; Tibor Mohacsy; Kund Molnar; Istvan Barsony
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Paper Abstract

The current-voltage characteristics and the low-frequency noise spectra of p-type Si - Porous Si - Al light emitting diodes were investigated. over 1 V forward biases a reasonable fit was obtained in the Fowler-Nordheim plot. At lower biases, however, an additional current-component appears, which shows a saturating character. This current component is ascribed to trap-assisted tunneling. Any attempts of accurately fitting the I-V characteristic by other known transport mechanisms failed, as reported earlier. The measured noise spectra show 1/f character. While the biasing current was varied from a about 30 microAmps up to several mAs, the noise level remained constant within the measuring error, i.e. the voltage noise is independent of the bias. This is contradictory to the results obtained on uniform resistors, where the noise power scales with I2, or V2. On this reason the observed noise is attributed to the saturating trap-assisted tunneling.

Paper Details

Date Published: 12 May 2003
PDF: 8 pages
Proc. SPIE 5113, Noise in Devices and Circuits, (12 May 2003); doi: 10.1117/12.492905
Show Author Affiliations
Bela Szentpali, Research Institute for Technical Physics and Materials Science (Hungary)
Peter Gottwald, Research Institute for Technical Physics and Materials Science (Hungary)
Tibor Mohacsy, Research Institute for Technical Physics and Materials Science (Hungary)
Kund Molnar, Research Institute for Technical Physics and Materials Science (Hungary)
Istvan Barsony, Research Institute for Technical Physics and Materials Science (Hungary)


Published in SPIE Proceedings Vol. 5113:
Noise in Devices and Circuits
M. Jamal Deen; Zeynep Celik-Butler; Michael E. Levinshtein, Editor(s)

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