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Preparation, electrochemical, photoelectrochemical, and solid state characteristics of In-incorporated TiO2 thin films for solar energy applications
Author(s): Waheed A. Badawy; Emad M. El-Giar
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Paper Abstract

Pure and indium incorporated titanium dioxide thin films were prepared using the spray/CVD technique. The incorporation of foreign atoms in the oxide film affects both the photovoltaic and photoelectrochemical characteristics of the heterojunction n-Si/TiO2. The presence of In in the titanium oxide matrix up to a film thickness of 100 nm had no effect on the transmittance of the oxide in the visible region. The conductivity and bandgap energy were found to increase with In-incorporation. The increased conductivity of the indium-containing oxide films is reflected in the improved photovoltaic properties of the prepared n-Si/TiO2- In solar cells. The photoelectrochemical properties of the prepared photoanodes revealed that the charge transfer step at the oxide/electrolyte interface leads to the deterioration of the device quality. A model for the effect of indium incorporation on the band structure of the TiO2 semiconducting film was suggested.

Paper Details

Date Published: 1 December 1991
PDF: 12 pages
Proc. SPIE 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X, (1 December 1991); doi: 10.1117/12.49231
Show Author Affiliations
Waheed A. Badawy, Univ. of Cairo (Egypt)
Emad M. El-Giar, Univ. of Cairo (Egypt)

Published in SPIE Proceedings Vol. 1536:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X
Carl M. Lampert; Claes G. Granqvist, Editor(s)

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