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Proceedings Paper

Photoelectrochemical etching of n-InP producing antireflecting structures for solar cells
Author(s): David Soltz; Lucila H. D. Cescato; Franco Decker
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Paper Abstract

Photoelectrochemical (PEC) etching of n-InP is studied as a method to engrave relief microstructures. Experiments of PEC were performed with holographic exposures ((lambda) equals 0.4579 micrometers ) and homogeneous white light on n-InP. The triangular profile characteristic of holographic patterns recorded parallel to the <011> direction appeared even when the sample was etched using homogeneous white light. In this case deep random microstructures were obtained that present interesting anti-reflecting properties that may be useful in solar cells applications.

Paper Details

Date Published: 1 December 1991
PDF: 9 pages
Proc. SPIE 1536, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X, (1 December 1991); doi: 10.1117/12.49229
Show Author Affiliations
David Soltz, UNICAMP (Brazil)
Lucila H. D. Cescato, UNICAMP (Brazil)
Franco Decker, UNICAMP (Brazil)


Published in SPIE Proceedings Vol. 1536:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion X
Carl M. Lampert; Claes G. Granqvist, Editor(s)

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