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Proceedings Paper

100-nm OPC mask patterning using raster-scan 50-kV pattern generation technology
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Paper Abstract

The complexity of photomasks is rapidly increasing as semiconductor devices are scaled down and optical proximity correction (OPC) becomes commonplace. Raster scan architectures are well suited to the challenge of maintaining mask throughput despite these trends. Electron-beam techniques have the resolution to support OPC requirements into the foreseeable future. The MEBES® eXara mask pattern generator combines the resolution of a finely focused electron probe with the productivity and accuracy of Raster Graybeam patterning. Features below 100nm can be created, and OPC designs are produced with consistent fidelity. Write time is independent of resist sensitivity, allowing high-dose processes to be extended, and relaxing sensitivity constraints on advanced chemically amplified resists. The system is designed for the production of 100nm photomasks, and will support the development of 70nm masks.

Paper Details

Date Published: 11 March 2002
PDF: 8 pages
Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); doi: 10.1117/12.491928
Show Author Affiliations
Frank E. Abboud, Etec Systems, Inc. (United States)
Ki-Ho Baik, Etec Systems, Inc. (United States)
Varoujan Chakarian, Etec Systems, Inc. (United States)
Damon M. Cole, Etec Systems, Inc. (United States)
Jay P. Daniel, Etec Systems, Inc. (United States)
Robert L. Dean, Etec Systems, Inc. (United States)
Mark A. Gesley, Etec Systems, Inc. (United States)
Robert J. Naber, Etec Systems, Inc. (United States)
Thomas H. Newman, Etec Systems, Inc. (United States)
Frederick Raymond, Etec Systems, Inc. (United States)
David Trost, Etec Systems, Inc. (United States)
Mark Wiltse, Etec Systems, Inc. (United States)
William DeVore, Etec Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 4562:
21st Annual BACUS Symposium on Photomask Technology
Giang T. Dao; Brian J. Grenon, Editor(s)

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