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Proceedings Paper

Sub-0.1@micron@m MOSFET fabrication using 248-nm lithography by resist trimming technique
Author(s): Chian-Yuh Sin; Bing-Hung Chen; Wei Loong Loh; Pradeep R. Yelehanka
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Proc. SPIE 4600, Advances in Microelectronic Device Technology, ; doi: 10.1117/12.491492
Show Author Affiliations
Chian-Yuh Sin, National Univ. of Singapore (Singapore)
Bing-Hung Chen, National Univ. of Singapore (Taiwan)
Wei Loong Loh, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Pradeep R. Yelehanka, Chartered Semiconductor Manufacturing, Ltd. (Singapore)


Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology

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