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Proceedings Paper

Evolution of dry etching for 0.15 um vertical trench in silicon
Author(s): Ke Wei; Xunchun Liu; Xiaoxu Guo; Zhenya Cao; Runmei Wang
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Proc. SPIE 4600, Advances in Microelectronic Device Technology, ; doi: 10.1117/12.491484
Show Author Affiliations
Ke Wei, Microelectronics Research and Developement Ctr. (China)
Xunchun Liu, Microelectronics Research and Developement Ctr. (China)
Xiaoxu Guo, Microelectronics Research and Developement Ctr. (China)
Zhenya Cao, Microelectronics Research and Developement Ctr. (China)
Runmei Wang, Microelectronics Research and Developement Ctr. (China)


Published in SPIE Proceedings Vol. 4600:
Advances in Microelectronic Device Technology

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