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Proceedings Paper

Current carrier mobility fluctuations in homogeneous semiconductors
Author(s): Slavik V. Melkonyan; Ferdinand V. Gasparyan; Vladimir M. Aroutiounian; Can E. Korman
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Paper Abstract

The two main causes of origin of the mobility fluctuation of the electrons in homogeneous, unlimited, and non-degenerated semiconductors are discussed. It is shown that the mobility fluctuation is conditioned by the symmetric component of the fluctuation of the distribution function, i.e. by the fluctuations of the conduction electrons energy. On the base of the developed quasi-classical model the spectrum of electrons lattice mobility fluctuations is calculated. In the frequency wide variation range it has 1/f form.

Paper Details

Date Published: 8 May 2003
PDF: 9 pages
Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); doi: 10.1117/12.490196
Show Author Affiliations
Slavik V. Melkonyan, Yerevan State Univ. (Armenia)
Ferdinand V. Gasparyan, Yerevan State Univ. (Armenia)
Vladimir M. Aroutiounian, Yerevan State Univ. (Armenia)
Can E. Korman, George Washington Univ. (United States)


Published in SPIE Proceedings Vol. 5115:
Noise and Information in Nanoelectronics, Sensors, and Standards
Laszlo B. Kish; Frederick Green; Giuseppe Iannaccone; John R. Vig, Editor(s)

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