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Proceedings Paper

Reduction of image placement errors in EPL masks
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Paper Abstract

Minimizing mask-level distortions is critical to ensuring the success of electron projection lithography (EPL) in the sub-65-nm regime. Previous research has demonstrated the importance of controlling the stress in the patterned stencil membranes to minimize image placement distortions. Low-stress, 100-mm diameter EPL mask blanks have been patterned with a layout that simulates the effects of the cross-mask and intra-subfield pattern density gradients found in a realistic circuit design. Extensive IP measurements were made to illustrate how local subfield correction schemes can be used to reduce all mask-level distortions (regardless of pattern type) to less than 15 nm (3s). Combining membrane stress control with the use of repeatable and identical reticle chucking is expected to reduce EPL mask-level distortions to the values that will be needed for the 65-nm design node.

Paper Details

Date Published: 16 June 2003
PDF: 10 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.490136
Show Author Affiliations
Obert R. Wood, International SEMATECH (United States)
Phillip L. Reu, Univ. of Wisconsin/Madison (United States)
Roxann L. Engelstad, Univ. of Wisconsin/Madison (United States)
Edward G. Lovell, Univ. of Wisconsin/Madison (United States)
Michael J. Lercel, IBM Microelectronics Div. (United States)
Carey W. Thiel, IBM Microelectronics Div. (United States)
Mark S. Lawliss, IBM Microelectronics Div. (United States)
R. Scott Mackay, Photronics, Inc. (United States)


Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

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