Share Email Print

Proceedings Paper

Static EUV micro-exposures using the ETS Set-2 optics
Author(s): Patrick P. Naulleau; Kenneth A. Goldberg; Erik H. Anderson; Jeffrey Bokor; Bruce D. Harteneck; Keith H. Jackson; Deirdre L. Olynick; Farhad Salmassi; Sherry L. Baker; Paul B. Mirkarimi; Eberhard Adolf Spiller; Christopher C. Walton; Donna J. O'Connell; Pei-Yang Yan; Guojing Zhang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

While interferometry is routinely used for the characterization and alignment of lithographic optics, the ultimate measure of performance for these optical systems is the transfer of an image or pattern into photoresist. Simple yet flexible exposure systems play an important role in this task because they allow complex system-dependent effects to be isolated from the printing results. This enables the most direct lithography evalaution of the optical system under investigation. To address tehse issues for commercial-class EUV optics, a synchrotron-based programmable illuminator exposrue station has been implemented at Lawrence Berkeley National Laboratory (the Advanced Light Source). As previously presented, this static microfield exposure system has been used to lithography characterize a 4-mirror optical system designed for the EUV Engineering Test Stand (ETS) prototype stepper. Based on the lithographic characterization, here we present a detailed performance analysis of the 0.1-NA ETS Set-2 optic. Operation of the static printing system with the Set-2 optic yielded approximately 330 exposed wafers, where each wafer contains one or more focus-exposure matrices. A wide variety of parameters were studied includign, among others, illumination conditions, resist thickness, and mask tone. Here we present a subset of this data in terms of process-window results. The resutls demonstrate a depth of focus (DOF) approximately 2μm for isolated 70-nm line features, 1 μm for nested 70-nm line features, and 0.5μm for 70-nm contacts on 270-nm pitch.

Paper Details

Date Published: 16 June 2003
PDF: 11 pages
Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); doi: 10.1117/12.490129
Show Author Affiliations
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Erik H. Anderson, Lawrence Berkeley National Lab. (United States)
Jeffrey Bokor, Lawrence Berkeley National Lab. (United States)
Univ. of California/Berkeley (United States)
Bruce D. Harteneck, Lawrence Berkeley National Lab. (United States)
Keith H. Jackson, Lawrence Berkeley National Lab. (United States)
Deirdre L. Olynick, Lawrence Berkeley National Lab. (United States)
Farhad Salmassi, Lawrence Berkeley National Lab. (United States)
Sherry L. Baker, Lawrence Livermore National Lab. (United States)
Paul B. Mirkarimi, Lawrence Livermore National Lab. (United States)
Eberhard Adolf Spiller, Lawrence Livermore National Lab. (United States)
Christopher C. Walton, Lawrence Livermore National Lab. (United States)
Donna J. O'Connell, Sandia National Labs. (United States)
Pei-Yang Yan, Intel Corp. (United States)
Guojing Zhang, Intel Corp. (United States)

Published in SPIE Proceedings Vol. 5037:
Emerging Lithographic Technologies VII
Roxann L. Engelstad, Editor(s)

© SPIE. Terms of Use
Back to Top