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Proceedings Paper

Pattern etching and selective growth of GaAs by in-situ electron-beam lithography using an oxidized thin layer
Author(s): K. Akita; Yoshimasa Sugimoto; Mototaka Taneya; Y. Hiratani; Y. Ohki; Hidenori Kawanishi; Yoshifumi Katayama
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Paper Details

Date Published: 1 March 1991
PDF: 12 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48963
Show Author Affiliations
K. Akita, Optoelectronics Technology Research Lab. (Japan)
Yoshimasa Sugimoto, Optoelectronics Technology Research Lab. (Japan)
Mototaka Taneya, Optoelectronics Technology Research Lab. (Japan)
Y. Hiratani, Optoelectronics Technology Research Lab. (Japan)
Y. Ohki, Optoelectronics Technology Research Lab. (Japan)
Hidenori Kawanishi, Optoelectronics Technology Research Lab. (Japan)
Yoshifumi Katayama, Optoelectronics Technology Research Lab. (Japan)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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