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Proceedings Paper

Instantaneous etch rate measurement of thin transparent films by interferometry for use in an algorithm to control a plasma etcher
Author(s): Helen L. Mishurda; Noah Hershkowitz
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Paper Abstract

A goal of our Engineering Research Center for Plasma Aided Manufacturing is to develop a feedback system to control a plasma etcher. Our system etches 1 micron thermally grown SiO2 layers using gas mixtures of CFJCHF/Og. Thin-film interferometry is conventionally used to measure an average etch rate each interlerometric fringe signals a change in film depth of X/2n. Our method determines the instantaneous etch rate using data from the interlerometer. The instantaneous etch rate will be used as feedback in a scheme to control the etch process by regulating the power and gas flow into the etcher. Results will be presented showing interferometric traces and analysis of the data The status of the feedback effort will also be presented.

Paper Details

Date Published: 1 March 1991
PDF: 7 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48961
Show Author Affiliations
Helen L. Mishurda, Univ. of Wisconsin/Madison (United States)
Noah Hershkowitz, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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