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Proceedings Paper

Laser processing of germanium
Author(s): Valentin Craciun; Ion N. Mihailescu; Armando Luches; S. G. Kiyak; G. N. Mikhailova
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Paper Abstract

Thermal treatments a key process for IC technologies face large difficulties in case of germanium due to the poor chemical stability of germanium oxides i. e. GeO and Ge02. Laser processing allows for a drastically reduction of the interaction time highly suitable for Ge processing. We report two applications: i) the laser synthesis of thin and stable germanium oxynitrides films and ii) the laser doping of germanium with boron to the view of obtaining very shallow junctions.

Paper Details

Date Published: 1 March 1991
PDF: 6 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48954
Show Author Affiliations
Valentin Craciun, Institute of Atomic Physics (Romania)
Ion N. Mihailescu, Institute of Atomic Physics (Romania)
Armando Luches, Univ. di Lecce (Italy)
S. G. Kiyak, Institute of General Physics (Russia)
G. N. Mikhailova, Institute of General Physics (Russia)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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