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Proceedings Paper

Real-time, in-situ measurement of film thickness and uniformity during plasma ashing of photoresist
Author(s): John T. Davies; Thomas E. Metz; Richard N. Savage; Horace O. Simmons
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Paper Abstract

This paper will discuss the performance ofequipment which monitors and so controls photoresist thickness and uniformity during plasma ashing without interfering with the process. Practical monitoring of a subtractive process of this type is significantly more complex than monitoring deposition processes. An initial absolute thickness measurement is needed. In addition the device must view the layer through a luminous medium and cannot rely on simple optical interference fringe counting. The equipment is self-calibrating and sensitive to layers dnm thick. An application to partial plasma resist ashing in high uniformity equipment will be described. Application to other films (e. g. oxide) will be discussed.

Paper Details

Date Published: 1 March 1991
PDF: 4 pages
Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); doi: 10.1117/12.48948
Show Author Affiliations
John T. Davies, Branson International Plasma Corp. (United States)
Thomas E. Metz, Branson International Plasma Corp. (United States)
Richard N. Savage, SC Technology (United States)
Horace O. Simmons, SC Technology (United States)


Published in SPIE Proceedings Vol. 1392:
Advanced Techniques for Integrated Circuit Processing
James A. Bondur; Terry R. Turner, Editor(s)

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